[siteorigin_widget class=”SiteOrigin_Widget_Button_Widget”][/siteorigin_widget]
[siteorigin_widget class=”SiteOrigin_Widget_Button_Widget”][/siteorigin_widget]
[siteorigin_widget class=”SiteOrigin_Widget_Button_Widget”][/siteorigin_widget]
[siteorigin_widget class=”SiteOrigin_Widget_Button_Widget”][/siteorigin_widget]
[siteorigin_widget class=”SiteOrigin_Widget_Button_Widget”][/siteorigin_widget]
[siteorigin_widget class=”SiteOrigin_Widget_Button_Widget”][/siteorigin_widget]
[siteorigin_widget class=”SiteOrigin_Widget_Headline_Widget”][/siteorigin_widget]
Metal lines
(width < 20 nm)
Metal nanodots Cr/Au
(diameter < 50 nm)

Alignment of two layers
using e-beam lithography
[siteorigin_widget class=”SiteOrigin_Widget_Headline_Widget”][/siteorigin_widget]
Pioneer e-beam lithography toolc(Raith)
- Field Emission Gun (FEG) 2nm
- 5×5 cm Laser Interferometer Stage
- Stitching and Alignement <20nm
- Autofocus system
MJB4 Mask Aligner (Süss Microtec)
- UV Lithography
- Filtered light at 365nm
- Resolution 0.8µm
- Wafer sizes up to 4″ (100mm)
- Realignment precision <1µm
µMLA Maskless Lithography (Heidelberg Instruments)
- Maskless UV lithography
- 365nm light
- Resolution 1 µm
- Wafer size up to 100 mm
- Alignment precision 1 µm